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Si7148DP
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
75
R DS(on) ( Ω )
0.011 at V GS = 10 V
0.0145 at V GS = 4.5 V
I D (A) a
28
28
Q g (Typ.)
33 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? 100 % R g Tested
PowerPAK SO-8
APPLICATIONS
? Primary Side Switch
6.15 mm
1
S
2
S
S
5.15 mm
D
D
3
4
G
8
D
7
6
D
5
D
G
Bottom View
Ordering Information: Si7148DP-T1-E3 (Lead (Pb)-free)
Si7148DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
75
± 20
28
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
22
28 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
12 b, c
60
28
4.3 b, c
45
100
A
mJ
T C = 25 °C
96
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
61
5.4 b, c
W
T A = 70 °C
3.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73314
S09-0273-Rev. B, 16-Feb-09
www.vishay.com
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